Abhishek Mukherjee

Abhishek Mukherjee is a PhD candidate in electrical engineering and computer science. His research aims to broaden the understanding of strain engineering in 2D materials to develop hyperspectral IR photodetectors that leverage the flexoelectric effect. Abhishek is investigating the effect of engineered in situ strain on semiconductors to break inversion symmetry and enhance the photogalvanic effect (PGE) in novel material candidates. PGE enables light-to-current efficiency exceeding the Shockley-Queisser limit, offering exciting opportunities for energy harvesting, photodetection, optical rectification, spintronics, imaging, and LIDAR technology. Utilizing MATLAB’s Deep Learning Toolbox, Abhishek plans to create a portrait of an ideal PGE material candidate, using data from materials experimentally shown to exhibit high PGE and identifying patterns in optoelectronic properties that manifest in the form of a high flexoelectric coefficient. Incorporating machine learning will enable the rapid evaluation of hundreds of materials and help unlock new functionalities in photonic devices. Abhishek’s research has the potential to advance fundamental knowledge in his field and pave the way for revolutionary photonic device design in many spheres, including night vision, celestial navigation, optical computing, and renewable energy.